| 摘要: | Bulk acoustic wave (BAW) properties of piezoelectric layer are very important design parameters for film bulk acoustic wave resonator devices. In this research, BAW properties of all crystalline plane oriented sputtered and epitaxial ZnO films were analyzed theoretically. The (002), (004), and (006) oriented ZnO films provided a pure longitudinal mode. The (100), (110), (200), (210), (300), and (220) oriented ZnO films provided a pure fast shear mode. The (101), (102), (103), (112), (201), (202), (104), (203), (211), (114), (212), (105), (204), (213), (302), (205), (106), and (214) oriented ZnO films provided a quasilongitudinal mode and a quasishear mode. Those bulk acoustic wave properties can be used for further device design and application. |
