(103) oriented AIN films is one kind of non c-axis oriented AIN films and can be used for the applications on film bulk acoustic wave (FBAR) and surface acostic wave (SAW) devices. As regards the bulk acoustic wave (BAW) properties of (103) oriented AIN films, it can excite a quasi-shear mode that can be used for FBAR liquid sensor. As regards the SAW properties of (103) oriented AIN films, the electromechanical coupling constant is larger than (002) oriented AIN films. In this research, the (103) oriented AIN films were successfully prepared on the silicon substrate by RF magnetron sputtering. The dependence between sputtering preeures was investigated by X-ray diffraction (XRD). The result exhibited higher (103) oriented AIN films appeared as the suitable sputtering conditions. The best oriented (103) AIN films were prepared with 300℃ substrate temperature, 50% nitrogen concentration, and 350W RF power in this research.
