Deposition of Non C-axis Oriented AIN Films

TUNG FANG Institutional Repository > 電子與資訊系(遊戲動畫系、動畫科) > 期刊論文 > Item 987654321/930

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://163.15.40.127/ir/handle/987654321/930

题名:	Deposition of Non C-axis Oriented AIN Films
作者:	Wu, Sean;Lee, Maw-Shung;Weng, Min-Hang;Lin, Zhi-Xun;Chen, K.I;(東方技術學院電子與資訊系)
贡献者:	東方技術學院電子與資訊系
日期:	2008-05-15
上传时间:	2010-10-08 10:07:32 (UTC+8)
摘要:	(103) oriented AIN films is one kind of non c-axis oriented AIN films and can be used for the applications on film bulk acoustic wave (FBAR) and surface acostic wave (SAW) devices. As regards the bulk acoustic wave (BAW) properties of (103) oriented AIN films, it can excite a quasi-shear mode that can be used for FBAR liquid sensor. As regards the SAW properties of (103) oriented AIN films, the electromechanical coupling constant is larger than (002) oriented AIN films. In this research, the (103) oriented AIN films were successfully prepared on the silicon substrate by RF magnetron sputtering. The dependence between sputtering preeures was investigated by X-ray diffraction (XRD). The result exhibited higher (103) oriented AIN films appeared as the suitable sputtering conditions. The best oriented (103) AIN films were prepared with 300℃ substrate temperature, 50% nitrogen concentration, and 350W RF power in this research.
關聯:	15th Symposium on Nano Device Technology
显示于类别:	[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

文件中的档案:

没有与此文件相关的档案.

在TFIR中所有的数据项都受到原著作权保护.

TAIR相关文章