Anomalous luminescence behavior in the InAlGaN thin film

TUNG FANG Institutional Repository > 電機工程系(數位科技系、玩具科) > 期刊論文 > Item 987654321/1924

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://163.15.40.127/ir/handle/987654321/1924

题名:	Anomalous luminescence behavior in the InAlGaN thin film
作者:	Hu, Sheng-Yao Lee, Yueh-Chien Feng, Zhe-Chuan Yang, Shi-Hong 胡勝耀 (東方設計學院電機工程系)
贡献者:	東方設計學院電機工程系
关键词:	Nitride material Optical properties Luminescence
日期:	2011-02
上传时间:	2015-07-15 14:25:15 (UTC+8)
摘要:	Photoluminescence (PL) spectra of a quaternary alloy In 0.014 Al 0.105 Ga 0.881 N thin film grown by low pressure metalorganic chemical vapor deposition (MOCVD) are studied experimentally in the temperature range of 10–300K. It is shown that the temperature dependence can be well studied by the Eliseev's model to characterize the scale of the exciton-localization effects for the exciton localization energy. Moreover, the Urbach energy was determined from an analysis of the low-energy side of the PL lineshape. From the temperature dependence of Urbach energy, the value of Urbach energy can be described by the Einstein oscillator model which takes into consideration the contributions from both the thermal and structural disorders.
關聯:	Journal of Alloys and Compounds, Vol.509 no.5, pp.2300-2303 J.Alloys and Compounds
显示于类别:	[電機工程系(數位科技系、玩具科)] 期刊論文

文件中的档案:

没有与此文件相关的档案.

检视Licence

在TFIR中所有的数据项都受到原著作权保护.

TAIR相关文章