Anomalous luminescence behavior in the InAlGaN thin film

TFIR > Department of Electrical Engineering > journal > Item 987654321/1924

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1924

Title:	Anomalous luminescence behavior in the InAlGaN thin film
Authors:	Hu, Sheng-Yao Lee, Yueh-Chien Feng, Zhe-Chuan Yang, Shi-Hong 胡勝耀 (東方設計學院電機工程系)
Contributors:	東方設計學院電機工程系
Keywords:	Nitride material Optical properties Luminescence
Date:	2011-02
Issue Date:	2015-07-15 14:25:15 (UTC+8)
Abstract:	Photoluminescence (PL) spectra of a quaternary alloy In 0.014 Al 0.105 Ga 0.881 N thin film grown by low pressure metalorganic chemical vapor deposition (MOCVD) are studied experimentally in the temperature range of 10–300K. It is shown that the temperature dependence can be well studied by the Eliseev's model to characterize the scale of the exciton-localization effects for the exciton localization energy. Moreover, the Urbach energy was determined from an analysis of the low-energy side of the PL lineshape. From the temperature dependence of Urbach energy, the value of Urbach energy can be described by the Einstein oscillator model which takes into consideration the contributions from both the thermal and structural disorders.
Relation:	Journal of Alloys and Compounds, Vol.509 no.5, pp.2300-2303 J.Alloys and Compounds
Appears in Collections:	[Department of Electrical Engineering] journal

Files in This Item:

There are no files associated with this item.

View Licence