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    Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1873


    Title: Effect of Annealing Treatment on Ferroelectric and Electrical Characteristics of Bi4-xLaxTi3O12 Thin Films on ITO/glass Substrate
    Authors: Chen, Kai-Huang
    Kuan, Ming-Chang
    Cheng, Chien-Min
    Tsai, Jen-Hwan
    (東方設計學院電子與資訊系)
    Contributors: 東方設計學院電子與資訊系
    Keywords: BLT thin films
    ferroelectric
    electrical properties
    ITO/glass
    leakage current density
    Date: 2011-07-15
    Issue Date: 2015-07-08 14:59:17 (UTC+8)
    Publisher: Tokushima, Japan: The University of Tokushima
    Abstract: In this study, the effects of annealing temperatures on microstructure and growth properties of Bi3.9La0.1Ti3O12 (BLT) thin films on ITO substrate under conventional furnace annealing processing as a function of annealing temperatures were developed. The ferroelectric and physical properties of BLT thin films were investigated. The maximum capacitance and minimum leakage current density of BLT thin films under conventional furnace annealing processing were 4.5 nF and 10-6 A/cm2, respectively. In addition, the X-ray diffraction (XRD) patterns and grain size of SEM morphology exhibited the growth and nucleation properties of BLT thin films increased with the increase of conventional furnace annealing temperatures. The results demonstrated the correlation between the electrical, physical properties and growth and nucleation features of BLT thin films.
    Relation: 6th International Conference on Advanced Materials, Development and Performance program and abstract book, pp.154
    AMDP 2011
    Appears in Collections:[Department of Electronics Engineering and Computer Science] conference

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