Effect of Annealing Treatment on Ferroelectric and Electrical Characteristics of Bi4-xLaxTi3O12 Thin Films on ITO/glass Substrate

TUNG FANG Institutional Repository > 電子與資訊系(遊戲動畫系、動畫科) > 會議論文 > Item 987654321/1873

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://163.15.40.127/ir/handle/987654321/1873

题名:	Effect of Annealing Treatment on Ferroelectric and Electrical Characteristics of Bi4-xLaxTi3O12 Thin Films on ITO/glass Substrate
作者:	Chen, Kai-Huang Kuan, Ming-Chang Cheng, Chien-Min Tsai, Jen-Hwan (東方設計學院電子與資訊系)
贡献者:	東方設計學院電子與資訊系
关键词:	BLT thin films ferroelectric electrical properties ITO/glass leakage current density
日期:	2011-07-15
上传时间:	2015-07-08 14:59:17 (UTC+8)
出版者:	Tokushima, Japan: The University of Tokushima
摘要:	In this study, the effects of annealing temperatures on microstructure and growth properties of Bi3.9La0.1Ti3O12 (BLT) thin films on ITO substrate under conventional furnace annealing processing as a function of annealing temperatures were developed. The ferroelectric and physical properties of BLT thin films were investigated. The maximum capacitance and minimum leakage current density of BLT thin films under conventional furnace annealing processing were 4.5 nF and 10-6 A/cm2, respectively. In addition, the X-ray diffraction (XRD) patterns and grain size of SEM morphology exhibited the growth and nucleation properties of BLT thin films increased with the increase of conventional furnace annealing temperatures. The results demonstrated the correlation between the electrical, physical properties and growth and nucleation features of BLT thin films.
關聯:	6th International Conference on Advanced Materials, Development and Performance program and abstract book, pp.154 AMDP 2011
显示于类别:	[電子與資訊系(遊戲動畫系、動畫科)] 會議論文

文件中的档案:

没有与此文件相关的档案.

检视Licence

在TFIR中所有的数据项都受到原著作权保护.

TAIR相关文章

数据加载中.....