本計劃採用固態反應法進行(Bi4-xLaxTi3-yVyO12) (BLTV)系列鐵電陶瓷靶材之製作，並藉由X-Ray 分析、SEM 分析、介電特性量測、P-E 特性量測，並比較其燒結溫度對介電特性之影響，以掌握最佳比例組成與陶瓷製程參數，並得到最佳介電特性之試樣。接著使用射頻磁控濺鍍法，沉積(Bi4-xLaxTi3-yVyO12) (BLTV) 鐵電陶瓷薄膜，並且探討製程參數對不同Pt/Ti/SiO2/Si 與SiO2/Si 基板的最佳鐵電陶瓷薄膜之介電特性及成長機制之影響。在二階段雷射退火處理下，使用較大雷射功率能量的248 nm 波長KrF 雷射結晶技術，不但不會造成鐵電薄膜結晶現象，反而會造成鐵電薄膜表面熔化的現象，雖然此現象並非是使用雷射結晶技術退火所期待的結果，然而在鐵電電容器元件中，金屬與鐵電薄膜熔化的介面卻使得鐵電薄膜具有較低漏電流大小、較平緩的表面粗糙度與較小的介電損失，因此更能提高鐵電電容器元件的儲存容量、較高的殘餘極化量與具有特性較佳的介電與鐵電材料。The solid reaction method is used to fabricate the (Bi4-xLaxTi3-yVyO12) (BLTV) ceramics target. The process parameters and sintering conditions on the dielectric characteristics of ceramic targets will be studied through the analysis of XRD, SEM, dielectric constant, and P-E characteristics. The best composition and manufacture parameters will be obtained. The composition of (Bi4-xLaxTi3-yVyO12) (BLTV) ceramics with best characteristics will be chosen to fabricate the target for the thin films deposition using rf magnetron sputtering method. Finally, the optimal parameters of (Bi4-xLaxTi3-yVyO12) (BLTV) thin films deposited on Pt/Ti/SiO2/Si and SiO2/Si substrates will be studied. In two step laser annealing, the fusion surface of ferroelectric thin films would be caused by the higher 248 nm KrF laser power. The lower leakage current, roughness and dielectric loss of ferroelectric capacitor is attributing to thin films and electrode. For this reason, the larger capacitance, remnant polarization and excellent dielectrically of ferroelectric capacitor would be increased by two step laser annealing.
