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    Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1622


    Title: Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass Substrates
    Authors: Chen, Kai-Huang
    Chang Ting-Chang
    Chang Guan-Chang
    Hsu, Yung-En
    Chen, Ying-Chung
    Xu, Hong-Quan
    陳開煌
    (東方技術學院電子與資訊系)
    Contributors: 東方技術學院電子與資訊系
    Date: 2010-04
    Issue Date: 2014-03-31 10:48:29 (UTC+8)
    Abstract: To improve the electrical properties of as-deposited BZ1T9 ferroelectric thin films, the supercritical carbon dioxide fluid (SCF) process were used by a low temperature treatment. In this study, the BZ1T9 ferroelectric thin films were post-treated by SCF process which mixed with propyl alcohol and pure H2O. After SCF process treatment, the remnant polarization increased in hysteresis curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. Additionally, the improvement qualities of as-deposited BZ1T9 thin films after SCF process treatment were carried out XPS, C–V, and J–E measurements.
    Relation: Applied Physics A: Materials Science & Processing, Vol.99 no.1, pp.291-295
    Applied Physics A.
    Appears in Collections:[Department of Electronics Engineering and Computer Science] journal

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