Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass Substrates

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題名:	Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass Substrates
作者:	Chen, Kai-Huang Chang Ting-Chang Chang Guan-Chang Hsu, Yung-En Chen, Ying-Chung Xu, Hong-Quan 陳開煌 (東方技術學院電子與資訊系)
貢獻者:	東方技術學院電子與資訊系
日期:	2010-04
上傳時間:	2014-03-31 10:48:29 (UTC+8)
摘要:	To improve the electrical properties of as-deposited BZ1T9 ferroelectric thin films, the supercritical carbon dioxide fluid (SCF) process were used by a low temperature treatment. In this study, the BZ1T9 ferroelectric thin films were post-treated by SCF process which mixed with propyl alcohol and pure H2O. After SCF process treatment, the remnant polarization increased in hysteresis curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. Additionally, the improvement qualities of as-deposited BZ1T9 thin films after SCF process treatment were carried out XPS, C–V, and J–E measurements.
關聯:	Applied Physics A: Materials Science & Processing, Vol.99 no.1, pp.291-295 Applied Physics A.
顯示於類別:	[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

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