In this study, (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 (BSTZ) thin films were successfully deposited on Pt/Ti/SiO2/Silicon substrate using radio frequency (RF) magnetron sputtering under the optimal sputtering parameters. After deposition, two different post-treated processes, the rapid temperature annealing (RTA) and conventional furnace annealing (CFA), were used to anneal the BSTZ thin films at 700°C and their physical and electrical characteristics had been investigated. As compared with the as-deposited BSTZ thin films, the crystalline structure, the grain growth and the dielectric constant of BSTZ thin films had no apparent change after the RTA process. However, the crystalline structure, the grain growth and the dielectric constant of BSTZ thin films had apparent improvement after the CTA process.
