The Influences of annealing process on physical and electrical characteristics of (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 thin films

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題名:	The Influences of annealing process on physical and electrical characteristics of (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 thin films
作者:	Chen, Kai-Huang Yang, Cheng-Fu 陳開煌 (東方技術學院電子與資訊系)
貢獻者:	東方技術學院電子與資訊系
日期:	2009
上傳時間:	2012-11-21 09:25:28 (UTC+8)
摘要:	In this study, (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 (BSTZ) thin films were successfully deposited on Pt/Ti/SiO2/Silicon substrate using radio frequency (RF) magnetron sputtering under the optimal sputtering parameters. After deposition, two different post-treated processes, the rapid temperature annealing (RTA) and conventional furnace annealing (CFA), were used to anneal the BSTZ thin films at 700°C and their physical and electrical characteristics had been investigated. As compared with the as-deposited BSTZ thin films, the crystalline structure, the grain growth and the dielectric constant of BSTZ thin films had no apparent change after the RTA process. However, the crystalline structure, the grain growth and the dielectric constant of BSTZ thin films had apparent improvement after the CTA process.
關聯:	Ferroelectrics, no.381, pp.59-66
顯示於類別:	[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

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