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    TFIR > Department of Electrical Engineering > journal >  Item 987654321/1402
    Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1402


    Title: Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates
    Authors: Lee, Yueh-Chien
    Hu, Sheng-Yao
    Water, Walter
    Tiong, Kwong-Kau
    Feng, Zhe-Chuan
    Chen, Yen-Ting
    Huang, Jen-Ching
    Lee, Jyh-Wei
    Huang, Chia-Chih
    Shen, Jyu-Lai
    Cheng, Mou-Hong
    胡勝耀
    (東方技術學院電機工程系)
    Contributors: 東方技術學院電機工程系
    Keywords: Zinc oxide Annealing Photoluminescence X-ray diffraction
    Date: 2009-02
    Issue Date: 2012-11-14 11:33:50 (UTC+8)
    Abstract: The structural and opticalproperties of ZnOfilmsdeposited on Sisubstrate following rapidthermalannealing (RTA) have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. After RTA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, an increase of the intensity and narrowing of the full-width at half-maximum (FWHM) of the (0 0 2) diffraction peak of the as-grown ZnOfilm. AFM images show roughening of the film surface due to increase of grain size after RTA. The PL spectrum reveals a significant improvement in the UV luminescence of ZnOfilms following RTA at 800 °C for 1 min.
    Relation: Journal of Luminescence, no.129, pp.148-152
    Appears in Collections:[Department of Electrical Engineering] journal

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