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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://163.15.40.127/ir/handle/987654321/1003


    题名: Temperature dependence anisotropic photoconductivity in 2H-MoSe2 single crystals
    作者: Lee, Y.C.
    Hu, S.Y.
    Tiong, K.K.
    Shen, J.L.
    Chen, K.W.
    Huang, Y.S.
    (東方技術學院電機工程系)
    胡勝耀
    贡献者: 東方技術學院電機工程系
    关键词: Semiconductor
    Anisotropy
    日期: 2008
    上传时间: 2010-12-24 16:08:34 (UTC+8)
    摘要: Single crystals of 2H-MoSe2 were investigated by the anisotropic photoconductivity (PC) measurements as a function of temperature in the range of 12–300 K. A significant shift towards lower energy has been observed in the PC spectra of the edge plane with respect to the van der Waals plane. The anisotropy in the indirect energy gap is being attributed to crystal anisotropy. The parameters that describe the temperature dependence of the anisotropic indirect energy gap are evaluated and discussed utilizing the Varshni and Manoogian–Woolley semi-empirical relationships. The Debye temperature of the sample has also been estimated by the fitted values.
    關聯: Journal of Alloys and Compounds, Vol. 448, No. 1-2, Pp.44-48
    显示于类别:[電機工程系(數位科技系、玩具科)] 期刊論文

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