Temperature dependence anisotropic photoconductivity in 2H-MoSe2 single crystals

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Title:	Temperature dependence anisotropic photoconductivity in 2H-MoSe2 single crystals
Authors:	Lee, Y.C. Hu, S.Y. Tiong, K.K. Shen, J.L. Chen, K.W. Huang, Y.S. (東方技術學院電機工程系) 胡勝耀
Contributors:	東方技術學院電機工程系
Keywords:	Semiconductor Anisotropy
Date:	2008
Issue Date:	2010-12-24 16:08:34 (UTC+8)
Abstract:	Single crystals of 2H-MoSe2 were investigated by the anisotropic photoconductivity (PC) measurements as a function of temperature in the range of 12–300 K. A significant shift towards lower energy has been observed in the PC spectra of the edge plane with respect to the van der Waals plane. The anisotropy in the indirect energy gap is being attributed to crystal anisotropy. The parameters that describe the temperature dependence of the anisotropic indirect energy gap are evaluated and discussed utilizing the Varshni and Manoogian–Woolley semi-empirical relationships. The Debye temperature of the sample has also been estimated by the fitted values.
Relation:	Journal of Alloys and Compounds, Vol. 448, No. 1-2, Pp.44-48
Appears in Collections:	[Department of Electrical Engineering] journal

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