The characteristics of bi3.99Ti2.9V0.1O12 thin films and its application in nonvolatile random memory devices

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Title:	The characteristics of bi3.99Ti2.9V0.1O12 thin films and its application in nonvolatile random memory devices
Authors:	陳開煌 Chen, Kai-Huang Chen, K.H. 楊證富 Yang, Cheng-Fu Yand, C.F. (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Keywords:	BTV RF sputter ferroelectric leakage current density dielectric constant
Date:	2008-06
Issue Date:	2010-12-23 17:12:28 (UTC+8)
Relation:	第15屆三軍官校基礎學術研討會
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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