Physical and Electrical Characteristics of Vanadium Doped Bi4Ti3O12 Thin Films for Applications in Nonvolatile Memory Devices

TFIR > Department of Electronics Engineering and Computer Science > conference > Item 987654321/928

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/928

Title:	Physical and Electrical Characteristics of Vanadium Doped Bi4Ti3O12 Thin Films for Applications in Nonvolatile Memory Devices
Authors:	陳開煌 Chen, Kai-Huang Yang, Cheng-Fu Chen, Lu-Ni (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Keywords:	BTV;RF sputter;dielectric constant;leakage current density;ferroelectric
Date:	2007-09-13
Issue Date:	2010-10-08 10:04:14 (UTC+8)
Relation:	The 6th Materials Processing, Properties and Performance (MP3) conference
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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