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    Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/923


    Title: Electrical Characteristics of Bi1Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices
    Authors: 陳開煌;Chen, Kai-Huang;Diao, Chien-Chen;Yang, Cheng-Fu;Wang, Bing-Xun;(東方技術學院電子與資訊系)
    Contributors: 東方技術學院電子與資訊系
    Keywords: NvFeRAM;Bi4Ti3O12;ferroelectric thin film;capacitance;leakage current density
    Date: 2008-08
    Issue Date: 2010-10-08 09:56:47 (UTC+8)
    Relation: The 6th Asian Meeting on Ferroelectrics (AMF-6)
    Appears in Collections:[Department of Electronics Engineering and Computer Science] conference

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