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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://163.15.40.127/ir/handle/987654321/900


    题名: Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices
    作者: Yang, Cheng-Fu;Chen, Kai-Huang;陳開煌;Chen, Ying-Chung;Chang, Ting-Chang;(東方技術學院電子與資訊系)
    贡献者: 東方技術學院電子與資訊系
    关键词: 2008
    日期: 2007
    上传时间: 2010-06-10 18:57:28 (UTC+8)
    摘要: In this study, the effects of oxygen gas plasma treatment on the surface of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated. The influence of oxygen plasma treatment on the crystal structure is developed by X-ray diffraction patterns and on the electrical characteristics are measured by the Al/BZT/Pt capacitor (metal–dielectric–metal) structure. Experimental results show that the capacitance increases and the leakage current density decreases as the oxygen plasma is treated on the BZT films. These results clearly indicate that the electrical characteristics of BZT films have effectively improved by means of the oxygen plasma surface treatment process.
    關聯: Applied Physics A – Materials Science & Processing, Vol.90, no.2, pp.329-331
    显示于类别:[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

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