ZnO thin films have been successfully grown on the quartz substrate by RF magnetron sputtering technique. The effects of rapid thermal annealing (RTA) on the structural and optical properties has been investigated by means of X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The structural defects of ZnO thin films were reduced during the RTA processes and the crystallinity was improved after the RTA treatments. It is also found out that RTA treatments can remarkably improve the ZnO crystallinity and enhance the UV emission in the wavelength range of 335 - 450 nm over the annealing temperature range of 600 - 800 degree.
關聯:
The 211th Meeting of The Electrochemical Society(ECS), Vol.6 no.2, p221-226
