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    TFIR > Department of Electrical Engineering > conference >  Item 987654321/830


    Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/830


    Title: Electrical transport studies of Nb-doped MoSe2 layered crystals
    Authors: Hu, Sheng-Yao;胡勝耀;Chen, M.K.;Sun, C.M.;Lee, Y.C.;Huang, Y.S.;(東方技術學院電機工程系)
    Contributors: 東方技術學院電機工程系
    Keywords: Layered material;Electrical transport;Anisotropic
    Date: 2007-05-18
    Issue Date: 2010-06-07 16:01:00 (UTC+8)
    Relation: 2007第五屆微電子技術發展與應用研討會
    Appears in Collections:[Department of Electrical Engineering] conference

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