Effect of Re dopant on the electrical and optical properties of MoSe2 single crystals

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题名:	Effect of Re dopant on the electrical and optical properties of MoSe2 single crystals
作者:	Hu, Sheng-Yao;胡勝耀;Liang, C.H.;Tiong, K.K.;Huang, Y.S.;(東方技術學院電機工程系)
贡献者:	東方技術學院電機工程系
关键词:	Transition metal alloys and compounds;Aniosotropy;Impurities in semiconductors;Electrical transport;Optical properties
日期:	2007-09-13
上传时间:	2010-06-07 11:50:21 (UTC+8)
摘要:	Chemical vapor transport (CVT) process with Br2 as a transporting agent has been utilized for growing large size MoSe2 single crystals by adding Re (rhenium) dopant (nominal concentration of 1%) during the growth process. The maximum size crystals are about 10 mm × 10 mm in surface area and 2 mm in thickness. The large edge plane facilitates easier study of the influence of crystal anisotropy on the electrical and optical properties of the layered crystals. The anisotropy of the conductivity and indirect band gap parallel and perpendicular to the crystal c-axis due to the interlayer van der Waals interaction and red shift of the indirect and direct band gaps due to doping have been measured. It is found that the conductivity anisotropy decreases drastically as a result of doping and the crystal anisotropy has a more pronounced influence on the indirect gap in comparing to the direct gap of the layered crystals.
關聯:	Journal of Alloys and Compounds, Vol.442 no.1-2, pp. 249-251
显示于类别:	[電機工程系(數位科技系、玩具科)] 期刊論文

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