The new concept for particle remove in wet bench cleaning

TFIR > Department of Electrical Engineering > conference > Item 987654321/806

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/806

Title:	The new concept for particle remove in wet bench cleaning
Authors:	Chen, Sheng-Hsiung;Chen, Shen-Li;Chung, Long-Yeu;鍾隆宇;Yeh, Wen-Kuan;(東方技術學院電機工程系)
Contributors:	東方技術學院電機工程系
Date:	2006-07-05
Issue Date:	2010-05-14 13:47:23 (UTC+8)
Abstract:	For the manufacturing of submicron or deep submicron ULSIs, it is important to completely suppress particles and contamination created on the silicon wafer surface. The tradition concept for cleaning need was used chemical content (APM, ammonia and hydrogen peroxide mixtures) to play a major role. Unfortunately, the SC-1 (APM) had negative effect on surface damage. In recent years, it has been modified to incorporate a more dilute solution in order to reduce surface micro-roughness caused by ammonium hydroxide. In this paper, a new thinking was proposed to use DI water quick dump rinse (QDR) mode change from conversation set-up to an improvement mode. A modified recipe with modified using DIW can totally remove the particle during process.
Relation:	Proceedings of 13th IPFA 2006, Singapore, pp.137-140
Appears in Collections:	[Department of Electrical Engineering] conference

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