Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering

TFIR > Department of Electronics Engineering and Computer Science > journal > Item 987654321/760

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/760

Title:	Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering
Authors:	Yang ,Ping-Feng;Wen,Hua-Chiang;Jian, Sheng-Rui;Lai, Yi-Shao;Wu,Sean;吳信賢;Chen, Rong-Sheng;(東方技術學院電子與資訊系)
Contributors:	(東方技術學院電子與資訊系)
Keywords:	ZnO;r.f. magnetron sputtering;nanoindentation;electromechanical coupling coefficient
Date:	2008-03
Issue Date:	2010-05-13 19:02:36 (UTC+8)
Abstract:	We investigated in this study structural and nanomechanical properties of zinc oxide (ZnO) thin films deposited onto Langasite substrates at 200 °C through radio frequency magnetron sputtering with an radio frequency power at 200 W in an O2/Ar gas mixture for different deposition time at 1, 2, and 3 h. Surface morphologies and crystalline structural characteristics were examined using X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The deposited film featured a polycrystalline nature, with (1 0 0), (0 0 2), and (1 0 1) peaks of hexagonal zinc oxide at 31.75°, 34.35°, and 36.31°. As the deposition time increased, the ZnO film became predominantly oriented along the c-axis (0 0 2) and the surface roughness decreased. Through Berkovich nanoindentation following a continuous stiffness measurement technique, the hardness and Young’s modulus of ZnO thin films increased as the deposition time increased, with the best results being obtained for the deposition time of 3 h. In addition, surface acoustic wave properties of ZnO thin films were also presented.
Relation:	Microelectronics Reliability, Vol.48 no.3, pp.389-394
Appears in Collections:	[Department of Electronics Engineering and Computer Science] journal

Files in This Item:

There are no files associated with this item.

Loading...