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    TFIR > Department of Electrical Engineering > conference >  Item 987654321/1922
    Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1922


    Title: Optical Properties of Quaternary Inx Aly Ga1-x-yN/GaN thin film
    Authors: Hu, S.Y.
    Lee, Y.C
    Feng, Z.C.
    Yang, S.H.
    Chen, Y.C.
    胡勝耀
    (東方設計學院電機工程系)
    Contributors: 東方設計學院電機工程系
    Keywords: InAlGaN
    photoconductivity and Photoluminescence
    Date: 2010-11-18
    Issue Date: 2015-07-14 14:40:32 (UTC+8)
    Publisher: Jhongll, Taiwan: National Central Universaity Electronic device and Materials Association
    Relation: 2010 International Electron Devices and Materials Symposium
    IEDMS 2010
    Appears in Collections:[Department of Electrical Engineering] conference

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