Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroeletric Gated Oxide Film

TFIR > Department of Electronics Engineering and Computer Science > conference > Item 987654321/1896

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Title:	Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroeletric Gated Oxide Film
Authors:	Cheng, Chien-Min;Chen, Kai-Huang;Lin, Chun-Cheng, Chen, Ying-Chung;Chen, Chih-Sheng;Chang, Ping-Kuan;鄭建民;陳開煌;林俊成;陳英忠;陳志聖;張評款;(東方設計學院電子與資訊系)
Contributors:	東方設計學院電子與資訊系
Date:	2010-06
Issue Date:	2015-07-14 13:52:44 (UTC+8)
Relation:	Ferroeletrics：Applications, pp.179-194
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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