Studied Near-infrared Photoluminescecen in Si-Implanted SiO2 Films after 1150C Rapidly Thermally Annealing at Heating Rate of 100 C/s

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Title:	Studied Near-infrared Photoluminescecen in Si-Implanted SiO2 Films after 1150C Rapidly Thermally Annealing at Heating Rate of 100 C/s
Authors:	Tsai, Jen-Hwan Fu, Ming-Yue Chen, Kai-Huang Yu, Ann-Tin Lin, Chun-Cheng 蔡震寰傅明宇陳開煌余安錠林俊成 (東方設計學院電子與資訊系)
Contributors:	東方設計學院電子與資訊系
Keywords:	Photoluminescence band Si+-implanted SiO2 films rapid thermal annealing heating rate
Date:	2011-05-27
Issue Date:	2015-07-14 13:48:57 (UTC+8)
Publisher:	高雄市：空軍軍官學校
Relation:	第18屆三軍官校基礎學術研討會議事手冊暨論文摘要, 頁1-5 三軍官校基礎學術研討會 The 18th Military Symposium on Fundamental Academic Research
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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