Preparation and Characterizations of Metal Oxide Resistive Switching Memories

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題名:	Preparation and Characterizations of Metal Oxide Resistive Switching Memories
作者:	Kai-Huang Chen Chien-Min Cheng Ming-Chang Kuan Tsung-Hsun Wu (東方設計學院電子與資訊系)
貢獻者:	東方設計學院電子與資訊系
關鍵詞:	Nonvolatile memories devices resistance random access memory CuO thin films transition metal oxides rf Sputtering
日期:	2010-12-16
上傳時間:	2015-07-08 14:54:34 (UTC+8)
出版者:	Tainan, Taiwna: Sothern Taiwan Universtity
摘要:	In this thesis, the rf magnetron sputtering was used to deposit metal oxide thin films (CuO、TiO2、V2O5、ZnO) on Pt/Ti/SiO2/Si and ITO/glass substrates, and Metal/ Insulator /Metal (MIM) structures were also fabricated. From four various materials of metal oxide thin films of the mechanisms behind resistance switching and leakage current of high resistance state (HRS) and low resistance state (LRS) were discussed, and then the optimal materials of metal oxide thin films were determined. In research of physical characteristics, the metal oxide thin films of crystallization、surface roughness and thickness were obtained by the XRD pattern and SEM. In research of electrical characteristics, the metal oxide thin films of current to voltage (I-V) characteristics and current density to electric field (J-V) characteristics were measured by the HP4156C, and then the characteristics and leakage current of Resistive Random Access Memory (RRAM) were discussed.
關聯:	International Conference on Manufacturing and Engineering Systems 2010, pp.452-455 ICNES 2010
顯示於類別:	[電子與資訊系(遊戲動畫系、動畫科)] 會議論文

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