In this letter, by the use of RF sputtering technique and lead-free (K0.5Na0.5)NbO3 ceramic target, a lead-free (K0.5Na0.5)NbO3 thin film is deposited on the ITO glass substrate to form a Metal-Ferroelectric-Metal (MFM) structure. In addition, the optimum Ar and O2 ratio is 3:1 and the optimum sputtering power is 130 W. The X-ray diffraction (XRD) and Field-Emission SEM are used to observe the phase and surface micro-structure of the thin film, respectively. Furthermore, the semiconductor parameter (HP4156C) is used to measure the electric characteristics, and the inferences of the annealing temperature and sputtering power are detailed investigated. From the measured results, it can be observed that as the annealing temperature increases, the grain size of the thin film will increase and become denser. And finally, the 400 C-annealing thin film reveals the densest structure and the best leakage current.
Relation:
International Conference on Manufacturing and Engineering Systems 2010, pp.381-384 ICNES 2010
