Improvement on oxygen vacancies effect of high dielectric constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films using by plasma treatment

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題名:	Improvement on oxygen vacancies effect of high dielectric constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films using by plasma treatment
作者:	Chen, Kai-Huang Wu, Chia-Lin Lin, Jian-Yang Cheng, Chien-Min (東方設計學院電子與資訊系)
貢獻者:	東方設計學院電子與資訊系
關鍵詞:	Oxygen vacancy high dielectric constantd plasma treatment BSTZ rf sputering
日期:	2011-05
上傳時間:	2015-07-08 14:47:20 (UTC+8)
摘要:	To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.
關聯:	Advanced Materials Reaearch, Vol.239-242, pp.1002-1005
顯示於類別:	[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

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