Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices

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題名:	Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices
作者:	Kuan, Ming-Chang Chen, Kai-Huang Tzou, Wen-Cheng Cheng, Chien-Min Lin, Yi-Jun (東方設計學院電子與資訊系)
貢獻者:	東方設計學院電子與資訊系
關鍵詞:	SCF process SBN thin film Memory window Leakage current density NvFeRAM
日期:	2011-05
上傳時間:	2015-07-08 14:45:44 (UTC+8)
摘要:	In this study, the electrical properties of as-deposited Sr0.4Ba0.6Nb2O6 (SBN) ferroelectric thin films on SiO2/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H2O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed.
關聯:	Advanced Materials Reaearch, Vol.239-242, pp.2628-2631
顯示於類別:	[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

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