Ferroelectric CaBi4Ti4O15 (CBT) thin films were prepared by spin coating technology using solution-based fabrication. The as-deposited CBT thin films were crystallized below 600 °C and the layered perovskite were crystallized at 700 °C using CFA processing in air. The enhancement of ferroelectric properties in CBT thin films for MFIS structures were investigated and discussed. Compared the Bi4Ti3O12 (BIT), the CBT showed the better physical and electrical characteristics. The 700 °C annealed CBT thin films on SiO2/Si substrate showed random orientation and exhibited large memory window curves. The maximum capacitance, memory window and leakage current density were about 250 pF, 2 V, and 10−5 A/cm2, respectively.
