In this study, the ferroelectricity of as-deposited Bi3.9La0.1Ti2.9V0.1O12 (BLTV), Bi3.9Ti2.9V0.1O12 (BTV), and Bi4Ti3O12 (BIT) thin films was prepared and compared by rf magnetron sputtering technology. For the BLTV, BTV, and BIT thin films deposited on Pt/Ti/SiO2/Si and SiO2/Si substrate, the physical and electrical characteristics of lanthanum doped BTV (BLTV) were better than those of BIT and BTV thin films. Regarding the physical properties, the micro-structure of as-deposited BTV and BLTV thin films were obtained and compared by XRD patterns and SEM images. The BLTV and BTV thin films were also exhibited clear the ferroelectricity. The remanent polarization (P r ) of as-deposited BLTV thin films was 11 µC/cm2 as the measured frequency of 100 kHz. It was higher than those of BTV thin films. Finally, the polarization of BLTV thin film capacitor decreased by 9%, while that of the BTV decreased by 15% after the fatigue test with 109 switching cycles.
Relation:
Applied Physics A, Vol.103 no.4, pp.1173-1177 Appl Phys A
