Electrical properties of p-ZnO/n-Si heterjunction formed by RF magnetron sputter

TFIR > Department of Electronics Engineering and Computer Science > conference > Item 987654321/1656

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1656

Title:	Electrical properties of p-ZnO/n-Si heterjunction formed by RF magnetron sputter
Authors:	Wu, Sean Lee, Maw-Shung Jhong, Shih-Bin Liu, Kuan-Ting Chang, Yee-Shin Hsiao, Yu-Jen 吳信賢 (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Date:	2009-09-01
Issue Date:	2014-04-18 14:34:44 (UTC+8)
Relation:	2009 International symposium on advanced ceramics and technology for Sustainable energy applications (ACTSEA’09), pp.196-197
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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