Triple-material surrounding-gate (TMSG) MOSFET for improving short channel effects

TFIR > Department of Electronics Engineering and Computer Science > conference > Item 987654321/1655

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1655

Title:	Triple-material surrounding-gate (TMSG) MOSFET for improving short channel effects
Authors:	Lee, Maw-Shung Wu, Sean Wang, Hsin-Kai 吳信賢 (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Keywords:	TMSG MOSFET short-channel effects threshold voltage
Date:	2009-11-19
Issue Date:	2014-04-18 14:32:20 (UTC+8)
Publisher:	桃園縣龜山鄉：長庚大學
Relation:	International Electron devices and materials symposia 2009 (IEDMS 2009) 2009 International Electron devices and materials symposia
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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