Surface Acoustic Wave Device Properties of (B, Al)N Film 128° Y-X LiNbO3 Substrate

TFIR > Department of Electronics Engineering and Computer Science > journal > Item 987654321/1651

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1651

Title:	Surface Acoustic Wave Device Properties of (B, Al)N Film 128° Y-X LiNbO3 Substrate
Authors:	Song, Jen-Hao Huang, Jow-Lay Wu, Sean Wang, Sheng-Chang Ruan, Jian-Long Lii, Ding-Fwu 吳信賢 (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Date:	2010-09
Issue Date:	2014-04-18 14:27:21 (UTC+8)
Abstract:	A c-axis orientated aluminium nitride (AlN) film on a 128° Y- X lithium niobate (LiNbO 3) surface acoustic wave (SAW) device which exhibit a large electromechanical coupling coefficient ( k2) and a high SAW velocity property, is needed for future communication applications. In this study, a c-axis orientated (B, Al)N film (with 2.6 at.% boron) was deposited on a 128° Y- X LiNbO 3 substrate by a co-sputtering system to further boost SAW device properties. The XRD and TEM results show that the (B, Al)N films show highly aligned columns with the c-axis perpendicular to the substrate. The hardness and Young's modulus of (B, Al)N film on 128° Y- X LiNbO 3 substrates are at least 17% and 7% larger than AlN films, respectively. From the SAW device measurement, the operation frequency characteristic of (B, Al)N film on 128° Y- X LiNbO 3 is higher than pure AlN on it. The SAW velocity also increases as (B, Al)N film thickness increases (at fixed IDT wavelength). Furthermore, the k2 of (B, Al)N on the IDT/128° Y- X LiNbO 3 SAW device shows a higher value than AlN on it.
Relation:	Applied Surface Science,Vol.256 no.23, pp.7156-7159
Appears in Collections:	[Department of Electronics Engineering and Computer Science] journal

Files in This Item:

There are no files associated with this item.

View Licence

Loading...