本計畫研究之目的為製作氮化鋁高調體聲波共振器，進元件製作、共振器特性測。高品質因素之共振器是通訊系統中重要之關鍵性元件，其中高調體聲波共振器其具有高品質因素、應用頻高、體積小、品質因素高、高功承受的能、可與 IC 製程整合的特性，使其在相關共振器中備受矚目。This repoet will fabricate High-tone bulk acoustic resonator (HBAR) based on AlN films and measure the properties of devise. High Q value resonator is a key component of the communication system application. HBAR based on the piezoelectric thin films and high Q substrate have some excellent properties, such as high Qf, high frequency, small volume, high power capability and compatible with IC process.
