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jsp.display-item.identifier=請使用永久網址來引用或連結此文件:
http://163.15.40.127/ir/handle/987654321/1649
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| 题名: | Influence of Substrate Temperature to Prepare (103) Oriented AIN Films |
| 作者: | Lee, Maw-Shung
Wu, Sean
Jhong, Shih-Bin
Liu, Kuan-Ting
Ro, Ruyen
Shih, Chia-Chi
Lin, Zhi-Xun
Chen, Kang-I
Cheng, Shou-Chang
吳信賢
(東方技術學院電子與資訊系) |
| 贡献者: | 東方技術學院電子與資訊系 |
| 日期: | 2010-12 |
| 上传时间: | 2014-04-18 14:24:11 (UTC+8) |
| 摘要: | (1 0 3) Oriented AlN films is an attractive piezoelectric material for the applications on surface acoustic wave (SAW) and film bulk acoustic wave (FBAR) devices. As regards the SAW properties of the (1 0 3) oriented AlN films, the electromechanical coupling constant (K2) is larger than the (0 0 2) oriented AlN films. As regards the bulk acoustic wave (BAW) properties of (1 0 3) oriented AlN films, it can excite a quasi-shear mode (velocity = 5957 m/s, K2 = 3.8%) that can be used for FBAR liquid sensor. In this research, the (1 0 3) oriented AlN films were successfully prepared on the silicon substrate by rf magnetron sputtering. Different temperatures (100 °C, 200 °C, 300 °C, and 400 °C) were used in this experiment process. The crystalline structure of films was determined by X-ray diffraction (XRD) and the surface microstructure was investigated by the atomic force microscope (AFM). The result exhibited the optimal substrate temperature is 300 °C. The optimal (1 0 3) oriented AlN films have the strongest XRD intensity, the smallest full width at half maximum (FWHM) value (0.6°), the largest grain size (15.8 nm) and the smoothest surface (Ra = 3.259 nm). |
| 關聯: | Microelectronics Reliability,Vol.50 no.12, pp.1984-1987 |
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