Effects of conducting layers on surface acoustic wave in AlN films on diamond

TUNG FANG Institutional Repository > 電子與資訊系(遊戲動畫系、動畫科) > 期刊論文 > Item 987654321/1648

請使用永久網址來引用或連結此文件: http://163.15.40.127/ir/handle/987654321/1648

題名:	Effects of conducting layers on surface acoustic wave in AlN films on diamond
作者:	Sung, C.C. Chiang, Y. F. Ro, R Lee, R Wu, Sean 吳信賢 (東方技術學院電子與資訊系)
貢獻者:	東方技術學院電子與資訊系
日期:	2009-12
上傳時間:	2014-04-18 14:20:40 (UTC+8)
摘要:	The interdigital transducer IDT/AlN/conducting layer/diamond structures are investigated in this study to design surface acoustic wave SAW devices in the super high frequency band. Simulation results using the ﬁnite element method show that a thin conducting layer can effectively increase the coupling coefﬁcient and, thus, broaden the bandwidth of SAW devices. For the Sezawa mode, it is illustrated that using a Ti layer with a layer thickness-to-wavelength ratio of 0.02 the maximum coupling coefﬁcient is 2.546% and the associated SAW phase velocity is 10657 m/s at the AlN ﬁlms thickness-to-wavelength ratio of 0.14. This coupling coefﬁcient is 105% higher than that in the IDT/AlN/diamond structure. The research results can be applied to design SAW devices using diamond based structures in the super high frequency band.
關聯:	Journal of Applied Physics,Vol.106 no.12, pp.124905 J. Appl. Phys.
顯示於類別:	[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	491	檢視/開啟

檢視Licence

在TFIR中所有的資料項目都受到原著作權保護.

TAIR相關文章