Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices

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Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1624

Title:	Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices
Authors:	Chen, Kai-Huang Cheng, Chien- Ming Tsai Jen-Hwan Lin, Feng-Yi 陳開煌 (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Keywords:	SCF process SBN thin film Memory window Leakage current density NvFeRAM
Date:	2010-06-28
Issue Date:	2014-03-31 10:52:43 (UTC+8)
Publisher:	Jeju, Korea
Abstract:	In this study, the electrical properties of as-deposited Sr0.4Ba0.6Nb2O6 (SBN) ferroelectric thin films on SiO2/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H2O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed.
Relation:	The 7th Asian Meeting on Ferroelectric and the 7th Asian Meeting on Electroceramics The 7th AMF-AMEC-2010
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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