Influence of substrate temperature to prepare (103) oriented AIN films

TFIR > Department of Electronics Engineering and Computer Science > journal > Item 987654321/1607

Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1607

Title:	Influence of substrate temperature to prepare (103) oriented AIN films
Authors:	Lee, Maw-Shung Wu, Sean Jhong, Shih-Bin Liu, Kuan-Ting Ro, Ruyen Shih, Chia-Chi Lin, Zhi-Xun Chen, Kang-I Cheng, Shou-Chang 陳剛毅;吳信賢 (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Date:	2010-12
Issue Date:	2014-03-27 15:56:07 (UTC+8)
Abstract:	(1 0 3) Oriented AlN films is an attractive piezoelectric material for the applications on surface acoustic wave (SAW) and film bulk acoustic wave (FBAR) devices. As regards the SAW properties of the (1 0 3) oriented AlN films, the electromechanical coupling constant (K2) is larger than the (0 0 2) oriented AlN films. As regards the bulk acoustic wave (BAW) properties of (1 0 3) oriented AlN films, it can excite a quasi-shear mode (velocity = 5957 m/s, K2 = 3.8%) that can be used for FBAR liquid sensor. In this research, the (1 0 3) oriented AlN films were successfully prepared on the silicon substrate by rf magnetron sputtering. Different temperatures (100 °C, 200 °C, 300 °C, and 400 °C) were used in this experiment process. The crystalline structure of films was determined by X-ray diffraction (XRD) and the surface microstructure was investigated by the atomic force microscope (AFM). The result exhibited the optimal substratetemperature is 300 °C. The optimal (1 0 3) oriented AlN films have the strongest XRD intensity, the smallest full width at half maximum (FWHM) value (0.6°), the largest grain size (15.8 nm) and the smoothest surface (Ra = 3.259 nm).
Relation:	Microelectronics Reliability, Vol.50, no.12, pp.1984-1987
Appears in Collections:	[Department of Electronics Engineering and Computer Science] journal

Files in This Item:

There are no files associated with this item.

View Licence

Loading...