Effects of ZnO additive on the structure and electrical properties of low-temperature sintered Cu-doped PMnN-PZT based ceramics

TUNG FANG Institutional Repository > 電子與資訊系(遊戲動畫系、動畫科) > 會議論文 > Item 987654321/1461

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://163.15.40.127/ir/handle/987654321/1461

题名:	Effects of ZnO additive on the structure and electrical properties of low-temperature sintered Cu-doped PMnN-PZT based ceramics
作者:	Tsai, Cheng-Che Chu, Sheng-Yuan Kung, Ming-Chang Pei, Ching-Hsing 蔡振哲朱聖緣官銘章裴慶興 (東方技術學院電子與資訊系) (東方技術學院通識教育中心)
贡献者:	東方技術學院電子與資訊系東方技術學院通識教育中心
关键词:	PMnN-PZT ferroelectric properties piezoelectric activity mechanical quality factor
日期:	2008-11
上传时间:	2012-12-24 15:27:42 (UTC+8)
出版者:	臺北市: 國立臺北科技大學
摘要:	To develop the anisotropic ceramic substrate with low sintering temperature for sensor applications, the iow cost and feasible material with moderate piezoelectrties, good dielecties and higher curie temperature would be explored. The piezoelectrtic ceramics with compositions of PbCa0.01[(Mn1/3Nb2/3)0.06-(Zr0.52Ti0.48)0.94]O3(PMN-PZT)+0.1 wt.％ CuO + x wt.％ ZnO (0.5≦x≦2) (abbreviated PMNZT-CZ10x) had been prepared by the conventional mixed-oxides method. ZnO dioants were used as the sintering aid to improve the bulk density under low sintering temperature (i.e.930-1020℃). The phase structure, microstructure, dielectric and piezoelectric properties, and ferroelectric properties with the amount of ZnO additive were systematically investigated. Experimental results showed that the sintering temperature could be lowered down to 980℃ and still keep reasonably good piezoelectric activity (i.e. high electromechanical coupling factor kp, kt), dielectric and ferroelectric properties. The preferable composition, obtained at x=1, presented the values of the electromechanical coupling factor (kp) (kt), mechanical quality factor (Qm), piezoelectric charge constant (d33), relative dielectric constant, loss tangent, coercive field (Ec), remanent polarization (Pr), temperature coefficient of resonant frequency (TCF) and curie point (Tc) of 0.55, 0.48, 475, 235 pc/N, 1620, 0.0023, 1.1kV/mm, 29 coul/cm2, -190ppm/℃, and 346℃. We found that the addition of ZnO could anhance the relative dielectric constant and remanent polarization compared to those of pure PMN-PZT.
關聯:	2008年中國材料科學學會年會暨學會四十週年慶論文摘要集中國材料科學學會年會
显示于类别:	[電子與資訊系(遊戲動畫系、動畫科)] 會議論文 [通識教育中心] 會議論文

文件中的档案:

没有与此文件相关的档案.

检视Licence

在TFIR中所有的数据项都受到原著作权保护.

TAIR相关文章

数据加载中.....