In this study, the perovskite Ba(Zr0.1Ti0.9)O3 (BZ1T9) ferroelectric thin films deposited on indium tin oxide (ITO)/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The optimal sputtering conditions of as-deposited BZ1T9 thin films are an rf power of 160 W, a chamber pressure of 10 mTorr, a substrate temperature of 580 °C, and an oxygen concentration of 40%. The effect of oxygen concentration on the physical and electrical characteristics of BZ1T9 thin films is determined. For different oxygen concentrations, the thickness and deposition rate are calculated by scanning electron microscopy (SEM). From polarization versus electrical field curves, the 2Pr value and coercive field of BZ1T9 thin films are determined to be 7 μC/cm2 and 250 kV/cm, respectively. In addition, the maximum dielectric constant, leakage current density, and transmittance within the ultraviolet-visible (UV-vis) spectrum are investigated.
關聯:
Japanese Journal of Applied Physics , no.48, pp091401-5
