The Electrical and Physical Properties of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films under Conventional Annealing Process

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Title:	The Electrical and Physical Properties of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films under Conventional Annealing Process
Authors:	Chen, Kai-Huang Yang, Cheng-Fu Diao, Chien-Chen 陳開煌 (東方技術學院電子與資訊系)
Contributors:	東方技術學院電子與資訊系
Date:	2009-08
Issue Date:	2012-11-21 10:02:49 (UTC+8)
Publisher:	中國: The Chinese Ceramic society
Abstract:	In this study, conventional furnace annealing (CFA) is used as the post-treated process, the effects of annealing temperatures on the crystallization and microstructure of (Ba0.7Sr0.3)(Ti0.9 Zr0.1)O3 (BSTZ) thin films will be developed, and the further influences on the electrical properties of BSTZ thin films are also investigated. A previous study made in our laboratory had shown that the dielectric constant and leakage current density of BSTZ thin film with 640 nm thickness are 192 and 10-6 A/cm2 under the frequency of 100 KHz, respectively. However, the maximum dielectric constant and minimum leakage current density of BSTZ thin films under CFA process are 420 (annealed at 800oC) and 10-8 A/cm2 (700oC), respectively. Besides, the X-ray diffraction (XRD) patterns and the SEM morphology show that crystalline features and grain size of BSTZ thin films increase with the increase of CFA-treated temperatures. These experiment results suggest that a strong correlation exhibits that the physical properties will influence the dielectric properties and nucleation features of BSTZ thin films.
Relation:	The Sixth China International Conference on High-Performance Ceramics programme Book and Abstracts 2009 China International Conference on High Performance Ceramic (CICC-6)
Appears in Collections:	[Department of Electronics Engineering and Computer Science] conference

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