The Influence of Oxygen Plasma Treatment on the Electrical Properties of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films

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題名:	The Influence of Oxygen Plasma Treatment on the Electrical Properties of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films
作者:	Chen, Kai-Huang Yang, Cheng-Fu 陳開煌 (東方技術學院電子與資訊系)
貢獻者:	東方技術學院電子與資訊系
關鍵詞:	Plasma treatment RF sputtering dielectric constant leakage cuurent thin film
日期:	2009-08
上傳時間:	2012-11-21 10:00:20 (UTC+8)
出版者:	中國：The Chinese Ceramic society
摘要:	The (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 (BSTZ) thin films are deposited using radio frequency (RF) magnetron sputtering, then oxygen gas plasma is treated on the surface of BSTZ thin films. The influence of oxygen plasma on the structure of BSTZ thin films is studied using X-ray diffraction patterns and the influence on the electrical characteristics is developed using an Al/BSTZ/Pt/Ti/SiO2/Si capacitor structure. As compared to that of the BSTZ thin films are not subjected to oxygen plasma treatment, experimental results reveal that the leakage current density of the BSTZ thin films in oxygen plasma treatment decreases as much as two orders in magnitude. In addition, the dielectric constants apparently increase and the leakage current density critically decrease as the oxygen-plasma-treated time increases. These results clearly indicate that the electrical characteristics of the BSTZ films are effectively improved using the process of oxygen plasma surface treatment.
關聯:	The Sixth China International Conference on High-Performance Ceramics programme Book and Abstracts 2009 China International Conference on High Performance Ceramic (CICC-6)
顯示於類別:	[電子與資訊系(遊戲動畫系、動畫科)] 會議論文

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