Ferroelectric 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) thin films were deposited on SiO2/p-Si(100) and Pt/Ti/ SiO2/p-Si(100) substrates using RF magnetron sputter method. The as-deposited films were crystallizes by a conventional thermal annealing (CTA) process conducted in air at temperatures 600 to 800℃ for 60 min. The large memory window and stable leakage current density were measured by C-V ane I-V mothed. Beside we also discussed the ferroelectric propersites of the annealed NBT-BT3 thin films for ferroelectric radom access memory (FeRAM) applications.
Relation:
The Sixth China International Conference on High-Performance Ceramics programme Book and Abstracts 2009 China International Conference on High Performance Ceramic (CICC-6)
