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請使用永久網址來引用或連結此文件:
http://163.15.40.127/ir/handle/987654321/1435
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| 題名: | Ferroelectric and Dielectric Properties of Bi4-xLaxT3V3-yO3 Ceramics |
| 作者: | Chen,K.H.
Chang, H.M.
Liu, Y.H.
Su, H.H.
Yang, C.F.
陳開煌
(東方技術學院電子與資訊系) |
| 貢獻者: | 東方技術學院電子與資訊系 |
| 日期: | 2008-11 |
| 上傳時間: | 2012-11-21 09:43:23 (UTC+8) |
| 出版者: | Tainan, Tainan: Kun Shan University |
| 摘要: | For ferroelectric random access memory (FRAM) applica-tions, the ferroelectric and electrical properties have been intensively investigated for ceramic and thin films [1.2]. Currently, isotropic perovskite ferroelectrics Pb(Zr,Ti)O3 (PZT) and Bi-layer structured ferroelectries (BLSFs), SrBi2Nb2O9 (SBN), Bi4Ti3O12 (BIT) and SrBi2Ta2O9(SBT), are know as a useful ferroelectric material [3-10]. For practical FRAM application. It is necessary to develop a new ferroelectric material with a high remanent polarization, high fatigue endurance. Low leakage current and iow proc-essing temperature [1-6]. To improve the ferroelectric proterties in BLSFs, the effects of ion doping have been investigated. Currently, La substituted BIT (Bi3.25La0.75Ti3O12) thin films have attracted much attention for potential FRAM material due to polarization fatigue endurance and large spontaneous polarization (Ps) [7]. However, BLT and BIT materials are known to suffer from high leakage current which leads to a small remanent polarization. However, the particular dopant change the ferroelectric and electrical properties depending on the ionic charge and radius. In this work, V-doped BLT (BLTV) ce-ramics were prepared by substituting high-valence V5+ for Ti4+ ions on the B site. The effects of V doping on the ferro-electric and the electrical properties were investigated. |
| 關聯: | Processdings of 2008 International Workshop on Next Generation Electronics, pp.83-84
2008 Internaonal Workshop in Next Generation Electronicsd
Internaonal Symposium on Nano Science and Technoogy
2008 IWNE |
| 顯示於類別: | [電子與資訊系(遊戲動畫系、動畫科)] 會議論文
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