The Ba (Zr0.1 Ti0.9)O3 (BZT) ceramic target is fabricated as the depositing target of BZT thin films, and the BZT thin films are successfully deposited on Pt/Ti/SiO2/Si substrate under optimal redio frequency (RF) depositing parameters with different RF power. The RF power has large effect on the crystalline orientation and roughness of BZT thin films. The metal-structure is fabricated for the characteristic measurement. The influence of RF power on the dielectric constant and leakage current density of BZT thin films will be investigated. As RF power is eaual to 160W, the maximum dielectric constant and lower leakage current density can be obtained.
