Switching properties of Ba (Zr0.1 Ti0.9)O3 ferroelectric films under various retention cycles for application in nonvolatile memory devices

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题名:	Switching properties of Ba (Zr0.1 Ti0.9)O3 ferroelectric films under various retention cycles for application in nonvolatile memory devices
作者:	Chen, Kai-Huang Tzou, Wen-Cheng Yang, Cheng-Fu Cheng, Chieh-Jen 陳開煌 (東方技術學院電子與資訊系)
贡献者:	東方技術學院電子與資訊系
日期:	2009
上传时间:	2012-11-21 09:22:46 (UTC+8)
摘要:	In this study, the BZT ferroelectric thin films were deposited on Pt/Ti/SiO2/Si substrate under the RF magnetron sputtering parameters, and their electrical and ferroelectric characteristics were investigated. The MFM structure of Al/Ba(Zr0.1Ti0.9) O3/Pt/Ti/SiO2/Si was proposed in order to be applied as non-volatile ferroelectric random access memory devices applications. Additionally, the coercive field and saturation polarization of BZT films were found to be changed with the different elapsed time and switching cycle. Finally, the switching properties of BZT Films under various retention cycles were also discussed.
關聯:	Ferroelectrics, no.385, pp.62-68
显示于类别:	[電子與資訊系(遊戲動畫系、動畫科)] 期刊論文

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