In this study, stoichiometry SrBi2Ta2O9 and SrBi2Ta2O9 + 4 wt% Bi2O3 was used as the compositions to fabricate the ceramic targets. The SrBi2Ta2O9 (SBT) thin films were deposited using the two different targets under the optimal depositing parameters with different oxygen concentration. After that, the metal-ferroelectric-insulator-semiconductor (MFIS) structure devices of Al/SrBi2Ta2O9 (SBT)/insulator (SiO2)/Silicon was fabricated and their electrical characteristics were investigated. The SBT thin films on SiO2/Si substrates show good capacitance-voltage characteristics and the threshold voltage shift of 23 V at applied voltage of ± 30 V bias. Finally, the memory properties of SrBi2Ta2O9 ferroelectric thin film prepared on SiO2/Si substrate were also discussed.
